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1

Influence du dopage p et n sur la croissance en phase vapeur de germanium sur substrats germanium

D Étienne, G Bougnot, N Achargui

Journal:

Thin Solid Films

Year:

1986

File:

PDF, 492 KB

1986

2

Dopage p par BI3 de couches Ge/Ge ET Ge/GaAs; caractérisationélectrique

D. Étienne, N. Achargui, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1986

Language:

french

File:

PDF, 475 KB

french, 1986

3

Propriétés optiques des hétérojonctions ZnSe sur GaAs

D. Etienne, G. Bougnot

Journal:

Thin Solid Films

Year:

1976

File:

PDF, 478 KB

1976

4

Photoluminescence des couches minces ZnSe/GaAs obtenues par transport avec H2

D. Etienne, G. Bougnot

Journal:

Thin Solid Films

Year:

1976

File:

PDF, 445 KB

1976

5

Étude de la cinétique de croissance de couches ZnSe ET ZnS épitaxiées sur fluorine par transport en phase vapeur

D. Étienne, G. Bougnot

Journal:

Thin Solid Films

Year:

1980

File:

PDF, 598 KB

1980

6

The optical properties of sprayed CdS thin films

S. Belgacem, J.M. Saurel, J. Bougnot

Journal:

Thin Solid Films

Year:

1982

Language:

english

File:

PDF, 444 KB

english, 1982

7

Cinétique de croissance de Ge/Ge et Ge/GaAs dans le système GeH2HeI2

D Étienne, G Bougnot

Journal:

Thin Solid Films

Year:

1986

File:

PDF, 718 KB

1986

8

Crystallographic and morphological characterization of sprayed Cd1−yZnyS thin films for 0 ⩽ y ⩽ 0.3

S. Duchemin, J. Bougnot, M. Kaka, M. Cadéne

Journal:

Thin Solid Films

Year:

1986

Language:

english

File:

PDF, 2.48 MB

english, 1986

9

Non-destructive determination of free carrier density of epitaxial layers of GaSb by IR reflectivity measurement

S. Schirar, L. Bayo, A. Melouah, J. Bougnot, C. Llinares, A. Montaner, M. Galtier

Journal:

Thin Solid Films

Year:

1987

Language:

english

File:

PDF, 526 KB

english, 1987

10

Growth of CuInSe2by metallorganic chemical vapour deposition (MOCVD): new copper precursor

S. Duchemin, M. C. Artaud, F. Ouchen, J. Bougnot, A. M. Pougnet

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1996

Language:

english

File:

PDF, 567 KB

english, 1996

11

Croissance et caractérisation de ZnSxSe1−x sur CaF2 par la technique du transport en phase vapeur en tube ouvert

D Étienne, M De Murcia, G Bougnot

Journal:

Thin Solid Films

Year:

1980

File:

PDF, 626 KB

1980

12

Fabrication du compose ternaire ZnGeP2 et caracterisation

B. Girault, A. Gouskov, J. Bougnot

Journal:

Materials Research Bulletin

Year:

1978

File:

PDF, 617 KB

1978

13

Growth of GaxIn1-xSb liquid phase epitaxial layers from a knowledge of the ternary phase diagram

A. Joullié, R. Aulombard, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1974

Language:

english

File:

PDF, 465 KB

english, 1974

14

He´te´ro-e´pitaxie de ZnSe sur GaAs par transport en tube ouvert

J. Chevrier, G. Galibert, D. E´tienne, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1975

Language:

french

File:

PDF, 747 KB

french, 1975

15

Croissance par épitaxie en phase liquide et diagramme de phase du système Ga1−xAlxSb

Albert Nguyen Van Mau, Claude Ance, Georges Bougnot

Journal:

Journal of Crystal Growth

Year:

1976

Language:

french

File:

PDF, 320 KB

french, 1976

16

Croissance et caractérisation de couches ZnSe, ZnS et ZnSxSe1-x épitaxiées sur flourine

D Étienne, J Chevrier, G Bougnot

Journal:

Journal of Crystal Growth

Year:

1977

Language:

french

File:

PDF, 382 KB

french, 1977

17

Liquid phase epitaxy of silicon at very low temperatures

B. Girault, F. Chevrier, A. Joullie, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1977

Language:

english

File:

PDF, 919 KB

english, 1977

18

Effets D'interaction entre substrat, dépôt et gaz vecteur lors de l'épitaxie de ZnSe sur GaAs

Jean Chevrier, Daniel Etienne, Louis Soonckindt, Jean Francois Bresse, Georges Bougnot

Journal:

Journal of Crystal Growth

Year:

1977

File:

PDF, 888 KB

1977

19

Growth kinetics of LPE Ga0.83Al0.17Sb layers grown from supercooled solutions

M. Mebarki, P. Salsac, A. Joullié, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1983

Language:

english

File:

PDF, 271 KB

english, 1983

20

Cinétique de croissance de couches de Ge épitaxiées sur Ge et GaAs PAR transport en phase vapeur

D. Etienne, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1984

Language:

french

File:

PDF, 839 KB

french, 1984

21

Cinétique de croissance de couches Ge/GaAs en présence d'éléments dopants: BI3(p) ET AsH3(n)

D. Étienne, G. Bougnot, N. Achargui

Journal:

Journal of Crystal Growth

Year:

1986

Language:

french

File:

PDF, 737 KB

french, 1986

22

Growth of Ga1−xAlxSb and Ga1−xInxSb by organometallic chemical vapor deposition

G.J. Bougnot, A.F. Foucaran, M. Marjan, D. Etienne, J. Bougnot, F.M.H. Delannoy, F.M. Roumanille

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 759 KB

english, 1986

23

Liquid phase epitaxial Ga0.96Al0.04Sb p/n junctions

M. Pérotin, L. Gouskov, H. Luquet, P. Silvestre, P. Abiale Abi, D. Magallon, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 576 KB

english, 1989

24

Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers

G. Bougnot, F. Delannoy, F. Pascal, P. Grosse, A. Giani, J. Kaoukab, J. Bougnot, R. Fourcade, P.J. Walker, N.J. Mason, B. Lambert

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 492 KB

english, 1991

25

InGaSb/GaSb photodiodes grown by MOVPE

F. Pascal-Delannoy, N.J. Mason, G. Bougnot, P.J. Walker, J. Bougnot, A. Giani, G.G. Allogho

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 420 KB

english, 1992

26

MOCVD growth of CuInSe2: first results

B. Sagnes, A. Salesse, M.C. Artaud, S. Duchemin, J. Bougnot, G. Bougnot

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 705 KB

english, 1992

27

Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates

A. Giani, J. Podlecki, F. Pascal-Delannoy, G. Bougnot, L. Gouskov, C. Catinaud

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 371 KB

english, 1995

28

Electrical properties of high digenite αCu2−yS (0 < y < 0.27)

F. Guastavino, H. Luquet, J. Bougnot, M. Savelli

Journal:

Journal of Physics and Chemistry of Solids

Year:

1975

Language:

english

File:

PDF, 176 KB

english, 1975

29

Absorption optique du compose mixte Ga1-xAlxSb, pres du bord d'absorption

C. Ance, J. Robin, A. Nguyen Van Mau, G. Bougnot

Journal:

Solid State Communications

Year:

1974

Language:

french

File:

PDF, 271 KB

french, 1974

30

Structural and optical studies of topotaxially-grown Cu2S from sprayed CdS thin films

B. Rezig, J. Bougnot, M. El Hammouti, M. Perotin, Vu Bay, M. Savelli

Journal:

Solar Energy Materials

Year:

1983

Language:

english

File:

PDF, 379 KB

english, 1983

31

Optical and structural behaviour of CuxS grown from copper, indium doped CdS sprayed thin films

H. Choukri, B. Rezig, J. bougnot

Journal:

Solar Energy Materials

Year:

1984

Language:

english

File:

PDF, 409 KB

english, 1984

32

Spray CdS-polyacetylene thin films photovoltaic heterojunctions

M. Abd-Lefdil, M. Cadene, M. Rolland, J. Bougnot, M.J.M. Abadie

Journal:

Solar Energy Materials

Year:

1986

Language:

english

File:

PDF, 431 KB

english, 1986

33

Fabrication and characterization of sprayed Cd1−yZnyS-Cu2S (dry process) solar cells

S. Duchemin, I. Youm, J. Bougnot, M. Cadene

Journal:

Solar Energy Materials

Year:

1987

Language:

english

File:

PDF, 568 KB

english, 1987

34

Performance of ZnyCd1−yS/CuxS solar cells

M. Fadly, F. El Akkad, J. Bougnot

Journal:

Solar Energy Materials

Year:

1989

Language:

english

File:

PDF, 513 KB

english, 1989

35

Photovoltaic performances of Cu2S/CdS sprayed solar cells

M. Savelli, J. Bougnot, H. Luquet, M. Perotin, O. Maris, C. Gril

Journal:

Year:

1982

Language:

english

File:

PDF, 624 KB

english, 1982

36

Analysis of the electrical characteristics of sprayed Cu2SCdS heterojunctions

H. Luquet, M. Perotin, A. Dhouib, J. Bougnot, M. Savelli

Journal:

Year:

1985

Language:

english

File:

PDF, 584 KB

english, 1985

37

Photo-induced junction behaviour of light-degraded CdSCu2S solar cells

B. Rezig, H. Choukri, J. Bougnot, C. Llinares, M. Savelli

Journal:

Year:

1985

Language:

english

File:

PDF, 416 KB

english, 1985

38

Chemical spray pyrolysis of CuInSe2 thin films

J. Bougnot, S. Duchemin, M. Savelli

Journal:

Year:

1986

Language:

english

File:

PDF, 836 KB

english, 1986

39

Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers

A. Giani, J. Bougnot, F. Pascal-Delannoy, G. Bougnot, J. Kaoukab, G.G. Allogho, M. Bow

Journal:

Materials Science and Engineering: B

Year:

1991

Language:

english

File:

PDF, 334 KB

english, 1991

40

Lateral growth on GaSb(111)B and GaSb(001) by metal-organic chemical vapour deposition

R. Bonnot, P. Coudray, A. Giani, A. Gouskov, G. Bougnot

Journal:

Materials Science and Engineering: B

Year:

1991

Language:

english

File:

PDF, 415 KB

english, 1991

41

Electron cyclotron resonance plasma deposition and etching of silicon nitride on GaSb for optoelectronic applications

R. Bonnot, A. Gouskov, G. Bougnot

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 968 KB

english, 1994

42

Discriminateur d'Amplitude Rapide

A. Sarazin, J. Samueli, G. Bougnot

Journal:

Nuclear Instruments and Methods

Year:

1961

File:

PDF, 146 KB

1961

43

Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy

A. Giani, F. Pascal-Delannoy, J. Podlecki, G. Bougnot

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 496 KB

english, 1996

44

On the electrical properties of CuxS

J. Bougnot, F. Guastavino, H. Luquet, D. Sodini

Journal:

physica status solidi (a)

Year:

1971

Language:

english

File:

PDF, 162 KB

english, 1971

45

Ultrasonic absorption in p-type GaSb at low temperature

G. Galibert, G. Bougnot, J. P. Desfours

Journal:

physica status solidi (a)

Year:

1973

Language:

english

File:

PDF, 535 KB

english, 1973

46

Diffusion and solubility of Zn in GaSb

S. F. da Cunha, J. Bougnot

Journal:

physica status solidi (a)

Year:

1974

Language:

english

File:

PDF, 274 KB

english, 1974

47

Sur la photoluminescence du séléniure de zinc

D. Etienne, J. Allègre, J. Chevrier, G. Bougnot

Journal:

physica status solidi (a)

Year:

1975

File:

PDF, 544 KB

1975

48

Diffusion and Solubility in Gallium Antimonide

J. Bougnot, E. Monteil, C. Llinares

Journal:

physica status solidi (b)

Year:

1967

Language:

english

File:

PDF, 144 KB

english, 1967

49

Effect of Donor Impurity Concentration on the Piezoresistance of n-Type GaSb

M. Averous, G. Bougnot

Journal:

physica status solidi (b)

Year:

1967

Language:

english

File:

PDF, 279 KB

english, 1967

50

Diffusion of Cadmium in Gallium Antimonide

J. Bougnot, L. Szepessy, S. F. da Cunha

Journal:

physica status solidi (b)

Year:

1968

Language:

english

File:

PDF, 119 KB

english, 1968

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